Single- and Multi-epi 905nm Pulsed Semiconductor Lasers
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip. This multi-layer design multiplies the output power by the number of epi-layers. For example, the QPGEW quad laser at 225μm active layer width, which has four epitaxially grown lasing layers, delivers an output peak power close to 100W. The T1 ¾ (TO-like) plastic encapsulated package complements Excelitas' epi-cavity lasers in hermetic metal packages and are ideally suited for high volume applications. The lasers employ Excelitas’ novel multi-active area laser chips to deliver high output power in a small emitting area. The laser chips of the PGEW family feature stripe widths of 75 and 225μm and come as single (PGEW), double (DPGEW), triple (TPGEW), or quadruple (QPGEW) epi-cavity version.
- Current Rating:30A
- Package / Case:Radial
- Power (Watts):45.0W ~ 70W
- Voltage - Input:9V ~ 12V