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Product Overview
Digi-Key Part Number IRFD123PBF-ND
Quantity Available 2,291
Can ship immediately
Manufacturer

Manufacturer Part Number

IRFD123PBF

Description MOSFET N-CH 100V 1.3A 4-DIP
Expanded Description N-Channel 100V 1.3A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 11 Weeks
Documents & Media
Datasheets IRFD123
Video File MOSFET Technologies for Power Conversion
Catalog Page 1269 (UK2011-EN PDF)
Product Attributes Select All
Categories
Manufacturer

Vishay Siliconix

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.3W (Ta)
Rds On (Max) @ Id, Vgs 270 mOhm @ 780mA, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package 4-DIP, Hexdip, HVMDIP
Package / Case 4-DIP (0.300", 7.62mm)
 
Additional Resources
Standard Package ? 2,500
Other Names *IRFD123PBF

17:58:17 2/23/2017

Price & Procurement
 

Quantity
All prices are in GBP.
Price Break Unit Price Extended Price
1 1.06000 1.06
10 0.94500 9.45
25 0.89680 22.42
100 0.73670 73.67
250 0.68868 172.17
500 0.60860 304.30
1,000 0.48048 480.48
2,500 0.44845 1,121.12
5,000 0.42603 2,130.13

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