Add To Favorites
Product Overview
Digi-Key Part Number SCT2450KEC-ND
Quantity Available 346
Can ship immediately
Manufacturer

Manufacturer Part Number

SCT2450KEC

Description MOSFET N-CH 1200V 10A TO-247
Expanded Description N-Channel 1200V (1.2kV) 10A (Tc) 85W (Tc) Through Hole TO-247
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Manufacturer Standard Lead Time 18 Weeks
Documents & Media
Datasheets SCT2450KE
Mfg Application Notes SiC Power Devices and Modules
Product Training Modules SiC MOSFETs
Video File ROHM Semiconductor SiC MOSFET Technology
Featured Product 2nd Generation High-Voltage SiC MOSFETs
1200 V Silicon Carbide (SiC) Diodes
Product Attributes Select All
Categories
Manufacturer

Rohm Semiconductor

Series -
Packaging ? Tube ?
Part Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs(th) (Max) @ Id 4V @ 900µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds 463pF @ 800V
Vgs (Max) +22V, -6V
FET Feature -
Power Dissipation (Max) 85W (Tc)
Rds On (Max) @ Id, Vgs 585 mOhm @ 3A, 18V
Operating Temperature 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
 
You May Also Be Interested In
Additional Resources
Standard Package ? 360

02:40:06 3/26/2017

Price & Procurement
 

Quantity
All prices are in GBP.
Price Break Unit Price Extended Price
1 7.03000 7.03
10 6.32500 63.25
25 5.76320 144.08
100 5.20070 520.07
250 4.77900 1,194.75
500 4.35734 2,178.67
1,000 3.79511 3,795.11

Submit a request for quotation on quantities greater than those displayed.

Send Feedback